Опис
N-Channel Enhancement Mode MOSFET
• 30V/12A, RDS(ON)=100m?(max) @ VGS=10V RDS(ON)=200m?(max) @ VGS=4.5V
• Super High Dense Cell Design
• High Power and Current Handling Capability
• TO-252 and SOT-223 Packages
N-Channel Enhancement Mode MOSFET
• 30V/12A, RDS(ON)=100m?(max) @ VGS=10V RDS(ON)=200m?(max) @ VGS=4.5V
• Super High Dense Cell Design
• High Power and Current Handling Capability
• TO-252 and SOT-223 Packages