Опис
P-Channel Enhancement Mode MOSFET
-30V/-6.1A, RDS(ON) = 24m?(typ.)
VGS = -10V RDS(ON) = 30m?(typ.)
VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged • SO-8 Package
P-Channel Enhancement Mode MOSFET
-30V/-6.1A, RDS(ON) = 24m?(typ.)
VGS = -10V RDS(ON) = 30m?(typ.)
VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged • SO-8 Package