APM4500

Опис

Dual Enhancement Mode MOSFET (N- and P-Channel)

N-Channel 20V/8A, RDS(ON) =22mW(typ.)

VGS = 4.5V RDS(ON) =30mW(typ.)

VGS = 2.5V · P-Channel -20V/-4.3A, RDS(ON) =80mW(typ.)

VGS =-4.5V RDS(ON) =105mW(typ.)

VGS =-2.5V · Super High Dense Cell Design

· Reliable and Rugged

· Lead Free and Green Devices Available (RoHS Compliant)