Опис
30V P-Channel PowerTrench MOSFET
·–40 A, –30 V. RDS(ON) = 20 mW @ VGS = –10 V
RDS(ON) = 30 mW @ VGS = –4.5 V
·Fast switching speed
·High performance trench technology for extremely
low RDS(ON)
·High power and current handling capability
·Qualified to AEC Q101